c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 www. ruichip s .com ru s1h20 r power schottky barrier diode mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v rrm maximum repetitive reverse voltage 10 0 v r maximum dc reverse voltage 100 v per device 20 a i f ( av ) average rectified forward current, t c =130 c per diode 10 a i fsm peak forward surge current,8.3ms half sine wave 150 a t stg storage temperature range - 55 to 1 50 c t j operating junction temperature 150 c mounted on large heat sink r q jc thermal resistance - junction to case per diode 1.5 c /w ? v rrm = 100v i f(av) =2x 10a ? low power loss and high efficiency ? high surge capability ? low leakage current ? low forward voltage drop ? lead free and green devices available ? rectifiers in smps ? free wheeling diode ? dc - dc converters absolute maximum ratings schottky barrier diode to - 220
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 2 www. ruichips .com ru s1h20 r electrical characteristics ( t c =25 c unless otherwise noted) RUS1H20R symbol parameter test condition min. typ. max. unit static characteristics v r = 10 0v, t c = 25 c 100 m a i r rever se leakage current v r = 10 0v, t c = 125 c 5 m a i f = 5a , t c = 25 c 0.65 - v i f = 5a , t c = 125 c 0.60 - v i f = 10a , t c = 25 c 0.75 0.8 v v f zero gate voltage drain current i f = 10a , t c = 125 c 0.66 0.7 v notes : pulse test ; p ulse width 3 00 m s, duty cycle 2% . ordering and marking information device marking package packaging quantity reel size tape width ru s1h20r RUS1H20R to - 220 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 3 www. ruichips .com ru s1h20 r typical characteristics power derating junction capacitance i fav C average forward current ( a ) c j - junction capacitance ( pf ) t c - case temperature ( c) v r C reverse voltage ( v ) forward voltage reverse current i f - forward current (a) i r C reverse current ( a) v f - forward voltage (v) v r - reverse voltage
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 4 www. ruichips .com ru s1h20 r package information to220 ( ab) package outline mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.1 73 0.180 0.185 h1 6.10 6.30 6.50 0.240 0.248 0.256 a1 1.22 1.27 1.32 0.048 0.050 0.052 l 13. 20 13.40 13. 50 0.5 20 0.528 0.53 1 a2 2.59 2.69 2.79 0.102 0.106 0.110 l1 - - 4.35 - - 0.171 b 0.77 0.81 0.90 0.030 0.032 0.035 l2 2.50ref 0.098ref b2 1.23 1.27 1 .36 0.048 0.050 0.054 ?p 3. 76 3.84 3.88 0.1 48 0.151 0.153 c 0.34 0.38 0.47 0.013 0.015 0.019 q 2.60 2.74 2.90 0.102 0.108 0.114 d 14.70 15.00 15.30 0.579 0.591 0.602 1 5 7 9 5 7 9 d1 8.60 8.70 8.80 0.339 0.343 0.346 2 1 3 5 1 3 5 e 10.06 10.16 10.26 0.396 0.400 0.404 dep 0.05 0.10 0.20 0.002 0.004 0.008 e 2.54bsc 0.1bsc ?p 1 1.40 1.50 1.60 0.055 0.059 0.063 e1 5.08bsc 0.2bsc
c opyright ruichips semiconductor co . , ltd rev . a C jul ., 2012 5 www. ruichips .com ru s1h20 r customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@rui chips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. co m legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 53 34 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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